sot89 npn silicon planar high voltage transistor issue 3 C october 1995 features * 400 volt v ceo *p tot = 1 watt complementary type C fcx558 partmarking detail C n58 absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo 400 v collector-emitter voltage v ceo 400 v emitter-base voltage v ebo 5v continuous collector current i c 225 ma peak pulse current i cm 500 ma power dissipation at t amb =25c p tot 1w operating and storage temperature range t j :t stg -65 to +150 c electrical characteristics (at t amb = 25c). parameter symbol min. max. unit conditions. breakdown voltages v (br)cbo 400 v i c =100 m a v ceo(sus) 400 v i c =10ma* v (br)ebo 5v i e =100 m a collector cut-off currents i cbo 100 na v cb =320v i ces 100 na v ce =320v emitter cut-off current i ebo 100 na v eb =4v emitter saturation voltages v ce(sat) 0.2 0.5 v v i c =20ma, i b =2ma* i c =50ma, i b =6ma* v be(sat) 0.9 v i c =50ma, i b =5ma* base-emitter turn on voltage v be(on) 0.9 v i c =50ma, v ce =10v* static forward current transfer ratio h fe 100 100 15 300 i c =1ma, v ce =10v i c =50ma, v ce =10v* i c =100ma, v ce =10v** transition frequency f t 50 mhz i c =10ma, v ce =20v f=20mhz collector-base breakdown voltage c obo 5pfv cb =20v, f=1mhz switching times t on t off 135 typical 2260 typical ns ns i c =50ma, v c =100v i b1 =5ma, i b2 =-10ma *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% spice parameter data is available upon request for this device for typical characteristics graphs see fmmt458 datasheet fcx458 3 - 85 c b c e
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